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PD -96907A
IRF6614
DirectFET Power MOSFET
l l l l l l l l l l
Application Specific MOSFETs VDSS VGS RDS(on) RDS(on) Lead and Bromide Free 40V max 20V max 5.9m@ 10V 7.1m@ 4.5V Low Profile (<0.7 mm) Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V Optimized for High Frequency Switching above 1MHz Ideal for CPU Core and Telecom Synchronous Rectification in DC-DC Converters Optimized for Control FET socket of Sync. Buck Converter Low Conduction Losses Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC ST
Typical values (unless otherwise specified)
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT
Description
The IRF6614 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
20
Typical R DS (on) (m)
Max.
40 20 12.7 10.1 55 102 22 10.2
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current
e
h h @ 10V k f
12 10 8 6 4 2 0 0 10 ID= 10.2A
A
Single Pulse Avalanche Energy Avalanche CurrentAe
ID = 12.7A 16 12 8 4 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V)
mJ A
VDS = 32V VDS= 20V
TJ = 125C TJ = 25C
10.0
20
30
40
50
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET MOSFETs Repetitive rating; pulse width limited by max. junction temperature.
Fig 1. Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Starting TJ = 25C, L = 0.43mH, RG = 25, IAS = 10.2A. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
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11/8/04
IRF6614
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
40 --- --- --- 1.35 --- --- --- --- --- 71 --- --- --- --- --- --- ---
---
Typ. Max. Units
--- 38 5.9 7.1 1.80 -5.5 --- --- --- --- --- 19 5.9 1.4 6.0 5.7 7.4 9.5
1.0
Conditions
VGS = 0V, ID = 250A
--- --- 8.3 9.9 2.25 --- 1.0 150 100 -100 --- 29 --- --- --- --- --- ---
1.5
V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 12.7A g VGS = 4.5V, ID = 10.2A g V mV/C A nA S VDS = 32V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 10.2A VDS = 20V nC VGS = 4.5V ID = 10.2A See Fig. 17 nC
VDS = VGS, ID = 250A
VDS = 16V, VGS = 0V VDD = 20V, VGS = 4.5V g ID = 10.2A
--- --- --- --- --- --- ---
13 27 18 3.6 2560 370 200
--- --- --- --- --- --- --- pF ns
Clamped Inductive Load VGS = 0V VDS = 20V = 1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) e --- --- --- --- 15 5.5 1.0 23 8.3 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 102
Min.
---
Typ. Max. Units
--- 2.6 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 10.2A, VGS = 0V g TJ = 25C, IF = 10.2A di/dt = 100A/s g
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6614
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG
h Power Dissipation h Power Dissipation k
Power Dissipation Operating Junction and
Parameter
Max.
2.1 1.4 42 270 -40 to + 150
Units
W
Peak Soldering Temperature Storage Temperature Range
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
100
hl Junction-to-Ambient il Junction-to-Ambient jl Junction-to-Case kl
Junction-to-Ambient Linear Derating Factor
Parameter
Typ.
--- 12.5 20 --- 1.0 0.017
Max.
58 --- --- 3.0 ---
Units
C/W
Junction-to-PCB Mounted
gA
W/C
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
1
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 4
R5 R5 C 5
Ri (C/W)
0.6676 1.0462 1.5611 29.282 25.455
i (sec)
0.000066 0.000896 0.004386 0.68618 32
1
0.1
2
3
4
5
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.001 0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with a thin gap filler and heat sink. (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6614
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.3V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.3V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
10
2.3V
0.1
60s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
2.3V
1 0.1 1
60s PULSE WIDTH Tj = 150C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100.0
2.0
Fig 5. Typical Output Characteristics
ID = 12.7A
ID, Drain-to-Source Current()
10.0
TJ = -40C
Typical R DS(on) (Normalized)
TJ = 150C TJ = 25C
VGS = 10V
1.5
1.0
1.0
VDS = 15V
0.1 1.5 2.0 2.5 3.0
60s PULSE WIDTH
3.5 4.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
4000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
Fig 7. Normalized On-Resistance vs. Temperature
30
TA= 25C
25
(m)
3000
Coss = Cds + Cgd
VGS = 3.0V
C, Capacitance (pF)
VGS = 3.5V VGS = 4.0V VGS = 4.5V VGS = 5.0V VGS = 10V
DS(on) Typical R
10 100
Ciss
2000
20
15
1000
10
Coss Crss
0 1
5 0 20 40 ID, Drain Current (A) 60 80
VDS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage
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IRF6614
100.0
ID, Drain-to-Source Current (A)
1000 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100sec 10 DC 1 Tc = 25C Tj = 175C Single Pulse 0.1 0.01 0.10 1.00 10.00 100.00
ISD , Reverse Drain Current (A)
10.0 TJ = 150C TJ = 25C TJ = -40C 1.0
1msec 10msec
VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60 2.5
Fig11. Maximum Safe Operating Area
50
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
40
ID = 250A
1.5
30
20
1.0
10
0 25 50 75 100 125 150
0.5 -75 -50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature (C)
TJ , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
100
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 4.3A 6.4A BOTTOM 10.2A
TOP
EAS, Single Pulse Avalanche Energy (mJ)
80
60
40
20
0 25 50 75 100 125 150
Starting TJ, Junction Temperature (C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
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IRF6614
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6614
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain
6 5 7
3 4
1
2
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IRF6614
DirectFET Outline Dimension, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.62 E 0.58 0.62 F 0.58 0.79 G 0.75 0.57 H 0.53 0.30 J 0.26 K O.88 0.98 2.28 L 2.18 0.70 M 0.59 0.08 N 0.03 IMPERIAL MIN 0.187 0.146 0.108 0.014 0.023 0.023 0.030 0.021 0.010 0.035 0.086 0.023 0.001 MAX 0.191 0.156 0.112 0.018 0.024 0.024 0.031 0.022 0.012 0.039 0.090 0.028 0.003
Note: Controlling dimensions are in mm
DirectFET Part Marking
8
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IRF6614
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6614). For 1000 parts on 7" reel, order IRF6614TR1 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) METRIC METRIC IMPERIAL IMPERIAL MIN MIN MAX CODE MAX MIN MIN MAX MAX 12.992 N.C 6.9 N.C A 330.0 177.77 N.C N.C 0.795 0.75 B N.C 20.2 19.06 N.C N.C N.C 0.504 0.53 C 0.50 12.8 13.5 0.520 13.2 12.8 0.059 0.059 D N.C 1.5 1.5 N.C N.C N.C 3.937 2.31 E N.C 100.0 58.72 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 N.C 12.4 11.9 0.567 14.4 12.01 H 0.469 0.47 11.9 11.9 N.C 0.606 15.4 12.01
Loaded Tape Feed Direction
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS METRIC IMPERIAL MIN MAX MAX MIN 0.311 0.319 7.90 8.10 0.154 0.161 4.10 3.90 0.469 0.484 11.90 12.30 0.215 0.219 5.55 5.45 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/04
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